Dresden 2011 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.1: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P1

Self-organized surface patterns on Si by sputter erosion with molybdenum surfactants — Kun Zhang, •Andre Pape, Marc Brötzmann, and Hans Hofsäss — II. Physikalisches Institut, Universität Göttingen,37077 Göttingen, Germany

We report on the self-organized pattern formation on Si surfaces driven by Mo surfactant atoms. Si substrates were irradiated with 5 keV Xe ions at normal and near normal ion incidence and fluences up to 5x10¹⁷ Xe⁺/cm² under continuous deposition of Mo surfactant atoms. In the absence of Mo deposition uniform flat surfaces are obtained. With Mo surfactants pronounced patterns like dots, combinations of dots and ripples as well as ripples with about 100 nm wavelength and up to 12 nm in height are generated. The patterns are analyzed with atomic force microscopy, Rutherford backscattering and transmission electron microscopy. We analyze the critical Mo steady-state coverage for onset of dot formation and onset of ripple formation and the evolution of the pattern contrast with increasing ion fluence. Pattern formation is explained by ion induced diffusion and phase separation of an initially flat amorphous Mo_xSi layer and subsequent ion beam erosion with composition dependent sputter yield. Directed deposition of Mo causes preferential deposition and shadowing and determines the final pattern orientation and morphology.