Dresden 2011 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.10: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P1

Nano Structure Formation on the Surfaces of SrTiO₂ and BaF₂ Induced by Impact of Slow Highly Charged Ions — •René Heller, Ayman S. El-Said, Richard A. Wilhelm, and Stefan Facsko — Helmholtz-Zentrum Dresden Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany

The interaction of slow highly charged ions with solid surfaces with particular interest on the nano structure formation ability was investigated intensively within the last years. The rapid release of the HCI’s potential energy as a unique feature of this kind of projectiles can cause local energy densities at the surface which are comparable to those induced by ultra short laser pulses or swift heavy ions.

Thus HCI give strong rise to be a promising tool for nano structure formation on solid surfaces. Since the potential energy release is strongly restricted to the surface proximity the amount of damage created in the bulk can be strongly suppressed.

In recent time the authors spend much effort in the exploration of the microscopic mechanisms of HCI nano structure creation on the surfaces of the alkali halide KBr and the earth alkali halide CaF₂, respectively. Motivated by the promising results and the predictions of the developed models we extended our investigation to the surfaces of SrTiO₂ as well as of BaF₂.

The results of these measurements are presented and discussed in the present contribution.