Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films
DS 42.103: Poster
Mittwoch, 16. März 2011, 15:00–17:30, P1
Thermal interface resistance of metal films on insulator and semi-conductor substrates measured by thermal wave techniques — •Puchong Kijamnajsuk1, Mihai Chirtoc2, Marc Möller1, David Schäfer3, Christoph Eisenmenger-Sittner3, Detlef Spoddig1, Ralf Meckenstock1, and Josef Pelzl4 — 1Experimental Physics, University Duisburg-Essen, Germany — 2Université de Reims Champagne-Ardenne, GRESPI-CATHERM, Reims, France — 3Vienna University of Technology, Institute of Solid State Physics, Wien, Austria — 4Institute of Experimental Physics, Ruhr-University, Bochum, Germany
Thermal interfaces are essential for the application of modern composites in electronic devices. The thermal interface resistance in Cu/C and Fe/GaAs flat model systems was studied by novel approach, which relies on the frequency dependence of the photothermal signal phase and amplitude at intermediate frequencies and thermo-reflectivity. Cu-films (1 μm) were deposited by magnetron sputtering and Fe (100nm) was grown by molecular beam epitaxy. The influence of thin bonding layers (5 nm) and subsequent heat treatment on the thermal interface resistance was investigated. The bonding layer were based on B with additions of the carbide forming metals Mo, Ti and Cr. These measurements were complemented by secondary ion mass spectroscopy, scanning electron microscopy and atomic force microscopy. No correlation was found with respect to the bonding layer. A correlation was observed between adhesion strength and thermal interface resistance as well as the heat treated samples.