Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films
DS 42.106: Poster
Mittwoch, 16. März 2011, 15:00–17:30, P1
Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt — •Yao Shuai1, Shengqiang Zhou1,2, Danilo Bürger1, Manfred Helm1, and Heidemarie Schmidt1 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P. O. Box 510119, Dresden 01314, Germany — 2State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China
Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and an Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the external voltage, the Au/BiFeO3/Pt is switched between two stable resistance states with a resistance ratio larger than two orders of magnitude. Based on a systematic investigation of its electrical properties with an emphasize on its transport characteristics, a model associated with the redistribution of OVs and electron hopping process is proposed, which agrees well with our experimental observations. It is known that electron hopping usually occurs in BFO thin films and causes large leakage current, which is undesirable in traditional ferroelectric or multiferroic applications. However, it is found in the present work that the electron hopping can be controlled and utilized to realize bipolar resistive switching, which is promising for future high density memory devices.