Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films
DS 42.121: Poster
Mittwoch, 16. März 2011, 15:00–17:30, P1
Electrical and structural properties of SrTiO3 / Sr-based conducting films on microwave suitable carriers — •Kyrylo Greben1, Eugen Hollmann1, Thomas Grellmann1, Rolf Kutzner1, Oleksandr Prokopenko2, Vladimir Pan3, and Roger Wördenweber1 — 1Institute of Bio- and Nanosystems (IBN), Forschungszentrum Jülich, D-52425 Jülich, Germany — 2Radiophysics Faculty of Taras Shevchenko National University of Kyiv, 2, Acad. Glushkov Ave., building 5, 03127, Kyiv, Ukraine — 3Institute for Metal Physics, National Academy of Sciences of Ukraine, 36 Vernadsky Street, Kiev, 03142, Ukraine
The aim of this work is the preparation of microwave suitable thin film devices consisting of a conducting base layer covered by a high-k oxide layer. Different systems are considered. Here we mainly report on the system consisting of r-cut sapphire or LaAlO3, SrRuO3 or Nb:SrTiO3, and SrTiO3 as a substrate, conductor, and high-k layer, respectively. In order to achieve epitaxial growth, the sapphire is covered with a (002) CeO2 buffer layer. Bottom electrodes and high-k SrTiO3 are deposited via rf magnetron sputter technique. Depending on the choice of parameters various phases and structural orientations are obtained for the base layer resulting in a large variation in the specific resistance. Finally, SrTiO3 layers are deposited onto the bottom electrodes layers. The resulting structural and electronic properties of both layers are determined via RBS, XRD analysis and cryoelectronic analysis, respectively.