Dresden 2011 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.16: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P1

Thermally stimulated current measurements on P3HT based MIS-Diodes — •Tobias Könyves-Toth, Christian Melzer, and Heinz von Seggern — Electronic Materials Department, Institute of Materials Science Technische Universität Darmstadt, Petersenstraße 23, 64287 Darmstadt, Germany

Organic electronics show promising abilities even though there are still problems concerning lifetime and performance. These problems are often attributed to trap states in the volume of the employed organic semiconductor and to interface-near trap states. We report on interface traps occurring in state of the art poly(3-hexylthiophene) organic field-effect transistors (OFETs) examined by the technique of thermally stimulated currents (TSC). By using metal-insulator-semiconductor devices the sign of the applied voltage selects the accumulated charge carrier type at the interface and thus, hole or electron interface traps can be addressed. The contribution of the dielectric insulator on the TSC signal was unveiled by reference measurements on devices without the semiconducting layer. Utilizing the TSC method we were thus able to identify different trap states at the insulator-semiconductor and the semiconductor-contact interface and we will present the energetic distribution of the occupied density of states as measured by fractional TSC. Further, we will discuss whether trap states are induced by oxygen, as often stated in literature. The discussed results are crucial for the performance of OFETs as they affect the accumulated charge carriers in the transistor channel.