Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films
DS 42.27c: Poster
Mittwoch, 16. März 2011, 15:00–17:30, P1
Flexible deposition of ferromagnetic metals on organic semiconductor surface: formation of sharp, nonreactive interface — •O.V. Molodtsova1, C. Laubschat1, M. Knupfer2, and V.Yu. Aristov2,3 — 1IFP, TU Dresden, D-01069 Dresden, Germany — 2IFW Dresden, Postfach 270116, D-01171 Dresden, Germany — 3ISSP, Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russia
The contacts of ferromagnetic Fe and Co metals to CuPc thin films fabricated at room temperature (RT) in UHV conditions by MBE like method are already studied to some degree [1, 2]. It was shown, that Fe or Co deposited on CuPc film form abrupt interface. However strong chemical interaction of magnetic metals with the nitrogen and carbon of the organic films was observed. In this contribution we present a detailed analysis of interfaces that are produced by deposition of the ferromagnetic elements Fe and Co onto the model organic semiconductor copper-phthalocyanine (CuPc) using soft landing in UHV conditions. Liquid N2 cooling provides formation of thin liquid film of Xe on CuPc substrate before Fe or Co deposition. XPS and UPS experimental results demonstrate that at such conditions the unwanted chemical reactions and interdiffusion processes in the interfacial region are essentially reduced or even completely suppressed. Thus we show, that such method allow to fabricate almost ideal ferromagnetic metallic contacts.
Acknowledgements. This work was supported by the DFG under grants no. KN393/9 and KN393/14, by the RFBR under grant no. 08-02-01170 and 10-02-00269.
[1] V. Yu. Aristov, O. V. Molodtsova, Yu. A. Ossipyan, B. P. Doyle, S. Nannarone, and M. Knupfer, Phys. Status Solidi A, 206, 2763 (2009).
[2] V.Yu. Aristov, O.V. Molodtsova, Yu.A. Ossipyan, B.P. Doyle, S. Nannarone, and M. Knupfer, Org. Electron. 10, 8 (2009).