Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films
DS 42.56: Poster
Mittwoch, 16. März 2011, 15:00–17:30, P1
Epitaxial Growth of Lead-Phthalocyanine on GaAs(001) Reconstructed Surfaces — •Linda Riele1, Benjamin Buick1, Thomas Bruhn2, Bjørn-Ove Fimland3, Patrick Vogt2, and Wolfgang Richter1 — 1Università di Roma Tor Vergata, Rome, Italy — 2TU Berlin, Berlin, Germany — 3Dept. of Electronics and Telecommunications, NTNU, Trondheim, Norway
Heterostructures of semiconductors and metal substituted phthalocyanine (MPc) films have attracted growing scientific and industrial interest because of their application in opto- or electronic devices. An important aspect in this respect is the control of the molecular ordering within the organic layers since the electrical conductivity of these layer depends crucially on the orientation and ordering of the molecules. Here we report on Raman scattering experiments on lead phthalocyanine (PbPc) layers (up to 20nm thick) deposited on GaAs(001) with c(4x4), (2x4) and (4x2) reconstructed surfaces. The Raman intensity selection rules of the PbPc vibrational modes are analyzed with respect to the GaAs(001) substrate coordinate system by rotating the sample around its normal. We find that some Raman intensities of the PbPc molecular vibratonal modes, depending on the initial surface reconstruction, vary with a period exactly correlated with the GaAs(001) substrate phonons modes. These findings prove an epitaxial growth mode of the PbPc layers on the GaAs(001) substrate. The results are in agreement with scanning tunneling microscopy (STM) results on submonolayer coverages demonstrating a correlation between the initial GaAs(001) surface structure and the PbPc layer properties.