Dresden 2011 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.58: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P1

Optical and electrical properties of nano-Si embedded in silica as novel solar cell semiconductor — •David Friedrich, Karl-Heinz Heinig, and Bernd Schmidt — Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Germany

Silicon photovoltaic (PV) modules are based on monocrystalline, microcrystalline or thin film amorphous silicon. Nanostructured Si might be one approach to achieve lower costs of electricity (€/Wp) by higher PV cell efficiency without substantial increase of fabrication costs.

Here we present measurements of optical and electrical properties of Si nanocrystals and sponge-like nano-Si morphologies embedded in silica. These Si nanostructures are fabricated by sputter deposition of SiOx followed by thermally activated nucleation or spinodal decomposition, resulting in Si nanoclusters or Si nanosponge, respectively. Due to the nanoscale feature size of the obtained Si sponge its band gap is opened by quantum confinement. Compared to separated Si nanoclusters, the spongy morphology ensures a higher electrical conductivity due to percolation.

Optical absorption, reflection and transmission data of SiOx and phase separated Si nanostructures will be presented for different compositions, i.e. x-dependent. The SiOx composition has been measured by Rutherford Backscattering (RBS). Additionally, spectroscopic ellipsometry and photolumiscence studies have been performed. These results will be discussed together with electrical resistivity measurements.