Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films
DS 42.6: Poster
Mittwoch, 16. März 2011, 15:00–17:30, P1
Permanent bending and alignment of ZnO nanowires — •Christian Borschel1, Susann Spindler1, Damiana Lerose2,3, Arne Bochmann3, Silke H. Christiansen3,4, Sandor Nietzsche5, Michael Oertel1, and Carsten Ronning1 — 1Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena — 2MPI für Mikrostrukturphysik, Weinberg 2, 06120 Halle (Saale) — 3Institut für Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena — 4MPI für die Physik des Lichts, Günther-Scharowsky-Str. 1, 91058 Erlangen — 5Zentrum für Elektronenmikroskopie, Friedrich-Schiller-Universität Jena, Ziegelmühlenweg 1, 07743 Jena
Ion beams can be used to bend or re-align nanowires permanently, after they have been grown. We have irradiated ZnO nanowires with ions of different species and energy, achieving bending and alignment in various directions. We study the bending of single nanowires as well as the simultaneous alignment of large ensembles of ZnO nanowires in detail. Computer simulations show that the bending is initiated by ion beam induced damage. Dislocations are identified to relax stresses and make the bending and alignment permanent and resistant against annealing procedures.