Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films
DS 42.7: Poster
Mittwoch, 16. März 2011, 15:00–17:30, P1
Investigation of conducting nanostructures on ta-C films made by FIB lithography — •Peter Philipp and Lothar Bischoff — Institute of Ion Beam Physics and Materials Research, Helmholtzzentrum Dresden-Rossendorf, P.O. Box 51 01 19, 01314 Dresden, Germany
Tetrahedral amorphous carbon (ta-C) films with high sp3 content produced by mass filtered vacuum arc deposition were modified by Ga+ FIB irradiation. Surface swelling occurs as a function of fluence, caused by ion induced conversion of sp3 to sp2 hybridized carbon atoms. A model [1] for diamond swelling was applied to ta-C films to estimate the swelling for fluences up to 1 x 1016 cm−2. For higher fluences data from TRIDYN simulations were included due to sputtering in a good agreement with the experiments. Van der Pauw structures were produced by means of Ga+ FIB lithography. A decrease of the sheet resistance with increasing fluence due to the evolution of graphitic regions was observed. The lowest value of 290 Ω/☐ was achieved at 1.6 x 1017 cm−2. Additionally, conducting graphitic wires were produced (length: 10 µm, width: 300 nm to 5 µm). The wire resistivity was measured within 130 kΩ (5 µm width) and 0.3 GΩ (300 nm width). Ion induced graphitization of ta-C films by FIB offers prospective applications in nano technology to fabricate conductive nanostructures in an insulating thin film. [1] F. Bosia et al. Nucl. Instrum. Meth. B 268 (2010) 2991.