Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films
DS 42.79: Poster
Mittwoch, 16. März 2011, 15:00–17:30, P1
Improved lateral conductivity of a two phase SiO:ucSi[n] intermediate reflective layer in thin film solar cells — Burkhard Gilles1, Ulrich Heinzmann1, Helmut Stiebig2, Stefan Gruss2, and •Florian Maier2 — 1Univ. of Bielefeld, Faculty of Physics, Molecular & Surface Physics — 2Malibu GmbH Co. KG
Increasing the efficiency of thin film solar cells is a crucial requirement for competing with other technologies in the field of solar energy conversion. After the introduction of thin film tandem solar cells, light management has become an important issue to achieve this end. The application of intermediate reflective layers is a promising approach for the optimisation of the light distribution between top and bottom cell. Numerous works on this field have been carried out so far. However, a major problem is the poor conductivity of those films which lead to an increase of the series resistance. The application of a layer of doped silicon oxide containing a phase of microcrystalline silicon (μc-SiOx:H <n>) can overcome this problem. The experiments were carried out on samples of industrial scale (1.1 m x 1.3 m). A number of possibilities for the suppression of the lateral resistivity have been examined. A substantial increase of conductivity has been achieved. The correlation of growth conditions, thickness and conductivity will be discussed.