Dresden 2011 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.9: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P1

Freestanding Si nanowires fabricated by Ga⁺ FIB implantation and subsequent anisotropic etching — •Roman Böttger¹, Lothar Bischoff¹, Bernd Schmidt¹, and Matthias Krause^1,2 — ¹Helmholtzzentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, 01314 Dresden, Germany — ²Technische Universität Dresden, Institut für Festkörperphysik, Zellescher Weg 16, 01062 Dresden, Germany

Localized Ga⁺ ion implantation in silicon-on-insulator substrates (top layer 2 µm) by focused ion beam and subsequent anisotropic and selective wet etching has been used to fabricate freely suspended nanowires with reproducible widths between 20 and 200 nm. The dependence of the resulting nanowire width on the implanted fluence has been investigated and is supported by a numerical model reproducing the experimental data and enabling an a priori estimation of the nanowire width as a function of the implanted fluence. Moreover, the temperature dependence of the nanowires resistivity and the activation energy for electrical current flow were investigated before and after direct current annealing in air and in vacuum ambient. Annealed nanowires showed a decrease of their resistivity up to two orders of magnitude, indicating a partial recrystallization of the nanowires through self-heating and a change in the conduction mechanism. The assumption of recrystallization is supported by scanning electron microscopy and Raman spectroscopy. The comprehension of the pinpointed fabrication of such Si nanostructures establishes a broad range of application in the field of nano-electro-mechanical systems.