Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 43: Poster II: Thin Film Chalcogenide Photovoltaics; Thermoelectric Materials, Thin Films, and Nanostructures
DS 43.17: Poster
Mittwoch, 16. März 2011, 15:00–17:30, P2
Thermal properties of phase change materials — •Karl Simon Siegert, Carl Schlockermann, Peter Zalden, and Matthias Wuttig — 1. Physikalisches Institut IA, RWTH Aachen University, 52064 Aachen
Many chalcogenic alloys such as GeTe or Ge1Sb2Te4 offer unique physical properties which justify their classification as so called phase change materials (PCM). All of these materials share the following attributes: high contrast between the amorphous and the crystalline state in both electrical resistivity and optical reflectivity combined with fast crystallization speed in the order of ns [1]. This special combination of properties make PCMs favorable for modern data storage applications. As the switching between states is induced by temperature, detailed knowledge of the thermal properties is needed for further improvement of PCM based data storage devices.
This work contributes to the thermal characterization of phase change materials. Several PCM thin films were sputter deposited on silicon substrates. Using different experimental techniques, the specific heat (DSC measurements) and the cross plane thermal conductivity (differential 3ω) of the films were measured. Further data processing revelead the thermal diffusivity and the main heat conduction channels of the materials. Additionally, the influence of thermal interface resistances within a PC-dielectric dual-layer system was determined by thickness series.
Bruns et al., Nanosecond switching in GeTe phase change memory cells, APL 2009