Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 43: Poster II: Thin Film Chalcogenide Photovoltaics; Thermoelectric Materials, Thin Films, and Nanostructures
DS 43.2: Poster
Mittwoch, 16. März 2011, 15:00–17:30, P2
Characterisation of Cu2ZnSnS4 — •Jan E. Stehr1, Detlev M. Hofmann1, Bruno K. Meyer1, Folker Zutz2, Christine Chory2, Ingo Riedel2, and Jürgen Parisi2 — 11st Physics Institute, Justus-Liebig-University Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany — 2Institut für Physik, Carl von Ossietzky Universität Oldenburg, Carl-von-Ossietzky-Straße 9-11, 26129 Oldenburg, Germany
Cu2ZnSnS4 (CZTS) is an interesting material for thin film photovoltaic applications. It has a band gap energy in the required range (∼ 1.5 eV) and avoids the cost intensive Indium being part of the solar-cell-absorbers based in CuInS2. We investigated CZTS nanoparticles prepared by wet chemistry and deposited in the form of thin films on glass substrates by optical absorption and magnetic resonance spectroscopies. Optical absorption starts at about 1.3 eV which indicates that some centres causing sub-band-gap absorption are present in the material. Low temperature EPR spectra reveal the presence of Cu2+ by the observation of the typical 4 line spectrum caused by the hyperfine splitting. Regarding the precursors used for synthesis one expects copper to be in the valence state of 1 (Cu+) thus the result may give a first experimental hint on the origin of the intrinsic p-type conductivity of the material.