Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 43: Poster II: Thin Film Chalcogenide Photovoltaics; Thermoelectric Materials, Thin Films, and Nanostructures
DS 43.8: Poster
Mittwoch, 16. März 2011, 15:00–17:30, P2
A set-up for 3ω measurements on semiconductor nanowires and the role of electron-phonon decoupling — •Johannes Gooth1,2, Phillip Wu1, Sofia Fahlvik Svensson1, Johannes Kimling2, Kornelius Nielsch2, and Heiner Linke1 — 1Division of Solid State Physics, Lund University, Sweden — 2Applied Physics and Microstructure Research Center Hamburg, University of Hamburg, Germany
To characterise the performance of thermoelectric materials, the so called "figure of merit" ZT is an important value. We present a device for ZT measurements in semiconductor nanowires by using a microheater for the thermopower measurement and use of the the 3ω method to measure the thermal conductivity. A double-resist technique is used to suspend CBE-grown InAs nanowires wires above a substrate. Whereas near room temperature the 3ω method is very well established, questions arise about the coupling of electrons and phonons during the self-heating process at lower temperatures. To obtain a better understanding, we model the situation using a two temperature model, and we aim to compare our experimental results to a measurement method which is not based on self heating.