Dresden 2011 – scientific programme
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DS: Fachverband Dünne Schichten
DS 45: Ion Interactions with Nano Scale Materials I (Focused Session -- Organisers: Diesing, Facsko)
DS 45.7: Talk
Thursday, March 17, 2011, 12:45–13:00, GER 37
Production and design of quantum dot lattices by ion beam irradiation — •Maja Buljan1, Iva Bogdanović-Radović1, Nikola Radić1, Marko Karlušić1, Goran Dražić2, Sigrid Bernstorff3, and Holy Vaclav4 — 1Rudjer Bošković Institute, 10000 zagreb, Croatia — 2Jožef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia — 3Sinchrotrone Trieste, 34102 Basovizza, Italy — 4Faculty of Mathematics and Physics, Charles University in Prague, 12116 Prague, Czech Republic
Quantum dot (QD) based materials are widely investigated nowadays due to their interesting properties and numerous possible applications. Especially interesting are semiconductor quantum dots embedded in amorphous wide-bandgap matrices due to strong confinement effects. However, the production of such materials with controllable size, composition and arrangement properties remains a challenge. Here we demonstrate a method for the production of a well-ordered three-dimensional array of semiconductor quantum dots in amorphous silica matrix. The ordering is achieved by ion beam irradiation and annealing of a multilayer film. Structural analysis shows that the quantum dots nucleate along the direction of the ion beam, while the mutual distance of the dots is determined by the diffusion properties of the multilayer material rather than by the distances between the traces of the irradiating ions. In addition, we present the effects of a post-irradiation annealing on the internal structure of the quantum dots.
[1] M. Buljan, et al. Appl. Phys. Lett. 95, 063104 (2009). [2] M. Buljan, et al. Phys. Rev. B 81 085321 (2010).