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DS: Fachverband Dünne Schichten

DS 55: Focused Session: Novel Green Laser Diodes (jointly with HL and O)

DS 55.3: Invited Talk

Thursday, March 17, 2011, 15:30–16:00, POT 51

Growth and properties of semi-polar GaN on patterned silicon substrate — •Nobuhiko Sawaki — Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan

Growth and properties of semi-polar and non-polar GaN on Si substrate is reviewed. Particular attention is paid on selective MOVPE on patterned substrates. By tilting the c-axis of the GaN on the silicon surface, the thermal expansion coefficient mismatch and the threading dislocation density were much reduced to improve the crystalline quality. By the virtue of self-organized growth mode on a facet, we achieved excellent surface morphology. The incorporation of carbon and magnesium were investigated in (1-101)GaN which is terminated by nitrogen. We found that the sample doped with carbon shows p-type conduction. Optical spectra and Hall measurements suggested the formation of shallow acceptor levels in the sample.