Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 60: Thermoelectric Materials, Thin Films, and Nanostructures II (Focused Session -- Organisers: Nielsch, Rastelli, Balke)
DS 60.6: Vortrag
Freitag, 18. März 2011, 15:15–15:30, GER 37
Electronic structure and thermoelectric properties of doped Heusler compounds CoTi1−xMxSb(M = Sc,V) — •S. Ouardi1, G. H. Fecher1, B. Balke1, X. Kozina1, M. Schwall1, G. Stryganyuk1, S. Ueda2, K. Kobayashi2, and C. Felser1 — 1Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg - University, Mainz, Germany — 2NIMS Beamline Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148, Japan.
Heusler compounds are considered to be promising thermoelectric materials because of their potential role in the realization of environmentally friendly technology. Complex C1b compounds such as CoTiSb are promising thermoelectrical materials. The substitutional series of Heusler compounds CoTi1−xT′xSn (T′= Sc, V) were synthesized and experimentally investigated with respect to their electronic structure and transport properties. The results show the possibility to create n-type and p-type thermoelectrics within one compound. The carrier concentration and temperature dependence of electrical conductivity, Seebeck coefficient, and thermal conductivity were investigated. Hard X-ray photoelectron spectroscopy was carried out to study the details of the electronic structure and relate it to the transport properties. Massive "in gap" states are found in pure CoTiSb that contain about 0.07 electrons per cell. This proves that the electronic states close to the Fermi energy play a key role on the behavior of the transport properties. This work was financially supported by the Federal Ministry of Economics and Technology (0327876D thermoHEUSLER).