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HL: Fachverband Halbleiterphysik

HL 11: Transport: mainly Theory

HL 11.4: Talk

Monday, March 14, 2011, 12:45–13:00, POT 51

Stochastic resonance in nanoelectronic devices — •Fabian Hartmann¹, David Hartmann¹, Peter Kowalzik¹, Alfred Forchel¹, Luca Gammaitoni², and Lukas Worschech¹ — ¹Technische Physik, Physikalisches Institut, Universität Würzburg and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany — ²NiPS Laboratory, Dipartimento di Fisica, Universita di Perugia, I-06123 Perugia, Italy, and Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, I-06123 Perugia, Italy

Noise degrades the performance of any device. This simple statement is not true if principle associated with Stochastic Resonance (SR) comes into play. Here the output exhibits a maximum signal-to-noise ratio (SNR) for noise floors unequal to zero. The authors have fabricated submicron-sized nanoelectronic devices and tested the noise activated response in these bistable devices under weak periodic modulation. We demonstrate that the weak periodic input can be synchronized with an optimum amount of noise and thus the operation condition of SR is fulfilled.