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HL: Fachverband Halbleiterphysik
HL 19: Silicon and Germanium
HL 19.12: Vortrag
Montag, 14. März 2011, 17:30–17:45, POT 251
Contact materials for sulphur hyperdoped black silicon — •Thomas Gimpel1, Kay-Michael Günther1, Anna Lena Baumann2, Augustinas Ruibys2, Stefan Kontermann2, and Wolfgang Schade1,2 — 1Clausthal University of Technology, EFZN, EnergieCampus, Am Stollen 19, 38640 Goslar — 2Fraunhofer Heinrich Hertz Institute, EnergieCampus, Am Stollen 19, 38640 Goslar
Irradiating a plane silicon surface with a train of intense femtosecond-laser pulses in a sulphur-containing atmosphere leads to a structured surface with enhanced absorption properties in the visible and near infrared spectral range, even at wavelengths below the bandgap. Because the resulting layer system shows photovoltaic activity it is proposed to turn this absorption into an efficient charge carrier generation for photovoltaic applications. Extracting those charge carriers is difficult, because of a structured, nanocrystalline covering surface layer with thickness of d<1μm and a sulphur content of about 1 at.% which influences the mechanical adhesion and contact resistances. Deposition techniques like screenprinting, sputtering, pulsed laser deposition and thermal evaporation are compared. We use different metal layer systems like silver, titanium/palladium/silver, chromium/gold and transparent contacts like indium tin oxide. By means of impedance spectroscopy we evaluate the contact behaviour finding the appropriate contact material.