Dresden 2011 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 24: Joint Focussed Session: Thin Film Chalcogenide Photovoltaics III

HL 24.6: Vortrag

Montag, 14. März 2011, 17:15–17:30, GER 37

Spectroscopic Imaging ellipsometry on arsenic sulphide fibers with a lateral resolution down to one micrometer — •Peter H Thiesen and Christian Röling — Accurion GmbH, Stresemannstr. 30, 37079 Göttingen

The cross section of three different arsenic sulphide fibers with different core diameters and different core/clad ratios were characterized. Ellipsometric contrast micrographs were recorded; wavelength spectra between 360 and 1000 nm at different regions of interest (ROI) and maps with a lateral resolution down to 1 micrometer of Delta and Psi were measured. The optical dispersion of the samples was described by a layer stack including an arsenic sulphide substrate, a roughness layer and air as ambient. The optical dispersion of arsenic sulphide was expressed by a Tauc-Lorentz function and the roughness layer by an effective medium approach. For the transformation of Delta and Psi maps to maps of thickness of roughness layers and maps of refractive index, the Tauc-Lorentz function was substituted by n and k as fitting parameters. Maps of refractive index and of thickness of roughness layer were obtained. Position dependent optical properties of cross sections of arsenic sulphide fibres, with core diameters down to few micrometers, can be characterized by spectroscopic imaging ellipsometry. Refractive index maps were obtained for selected wavelengths with a lateral resolution better than one micrometer.