Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: III-V-Compounds: Nitrides
HL 31.3: Vortrag
Dienstag, 15. März 2011, 10:45–11:00, POT 51
Optical gain in GaNAsP heterostructures pseudomorphically grown on silicon — Nektarios Koukourakis1, Dominic Funke1, Nils C. Gerhardt1, Martin R. Hofmann1, Sven Liebich2, Christina Bückers2, Steffen Zinnkann2, Martin Zimprich2, Kerstin Volz2, •Stefan W. Koch2, Wolfgang Stolz2, and Bernardette Kunert3 — 1Photonics and Terahertztechnology, Ruhr-Universität Bochum, Bochum, Germany — 2Material Science Center and Faculty of Physics, Philipps-University Marburg, Marburg, Germany — 3NAsP III/V GmbH, Marburg, Germany
The realization of an electrically pumped semiconductor laser based on silicon remains a huge challenge due to the indirect nature of its band structure. However, a success in this effort would allow for combining the advantage of optical data processing with the well-established silicon processing technology, leading to optoelectronic integrated circuits (OEICs) with drastically improved performance. One promising approach is to grow the novel dilute nitride material Ga(NAsP) lattice matched on silicon. Ga(NAsP) has a direct band gap and has already led to optically and electrically pumped lasers on GaP, that have a lattice constant similar to that of silicon. Here, we analyse the modal gain of the Ga(NAsP) direct band gap material system grown on (001) Si-substrates. We compare the performance of several sample compositions and demonstrate high modal gain values at room temperature, comparable to common high quality laser materials.