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HL: Fachverband Halbleiterphysik
HL 31: III-V-Compounds: Nitrides
HL 31.8: Vortrag
Dienstag, 15. März 2011, 12:15–12:30, POT 51
Investigation of the influence from TMIn for the optical properties of MOCVD grown InN — •Stefan Mohn1, Ronny Kirste1, Gordon Callsen1, Öcal Tuna2, Michael Heuken2, and Axel Hoffmann1 — 1TU Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, 10623 Berlin, Germany — 2Aixtron AG, Kaiserstr. 98, 52135 Herzogenrath, Germany
Indium Nitride is a member of the III-V semiconductors and has a band gap of approx 0.7 eV. It is a promising candidate for LED, solar cells and other optoelectronic applications. In this talk we report on photoluminescence studies of InN layers grown on sapphire/GaN substrate by metal organic chemical vapor deposition (MOCVD). Commonly used precursors for the growth are of InN Trimethyl Indium (TMIn) and ammonia (NH3). It is common belief that the ratio between TMIn and NH3, is the key parameter for the quality of a grown sample. In this contribution we can show that an increase of TMIn flow, while the ammonia flow was constant, leads to to a change of the optical properties. With increasing TMIn content the observed maximas of the photoluminescence measurements shifts to higher energies. At the same time the full width at half maximum (FWHM) is increasing. Therefore we assume a decreasing quality of the grown samples with increasing of the TMIn content. We also observed as decrease in the sample quality, when the TMIn and the ammonia flows are increased while the V/III-ratio remains constant. Theses results are confirmed by a bundle of experimental techniques such as Raman spectroscopy, AFM and XRD.