Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 4: Carbon: Diamond, Nanotubes, and Graphene

HL 4.6: Talk

Monday, March 14, 2011, 11:30–11:45, POT 251

Dielectrophoretic assembly of field-effect transistors using sorted semiconducting carbon nanotubes — •Juliane Posseckardt¹, Yann Battie², Romain Fleurier², and Michael Mertig¹ — ¹TU Dresden, Professur für Physikalische Chemie, Mess- und Sensortechnik, 01062 Dresden, Germany — ²LEM UMR 104 Onera-CNRS 92322 Châtillon, France

We report on the direct assembly of single-walled carbon nanotube field-effect transistors (SWCNT-FETs) by dielectrophoresis using highly enriched semiconducting carbon nanotubes.

The SWCNTs have been sorted using an improved separation technique by density gradient ultracentrifugation made in two steps. The sorted SWCNTs have been characterized by Raman and UV-vis-IR spectroscopy.

The out-of-solution guided assembly from sorted semiconducting fraction is superior in comparison to conventional assembly from unsorted fractions because of the missing necessity to break down purely metallic current bridges. By this, transistors with a high ON/OFF ratio can be produced in one step.