Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 41: Nitrides: InGaN
HL 41.4: Vortrag
Dienstag, 15. März 2011, 15:00–15:15, POT 51
effect of mocvd growth parameters on high In content InGaN layers — •öcal tuna1, hannes behmenburg1,2, christoph giesen1, egidijus sakalauskas3, rüdiger goldhahn3, holger kalisch2, rolf h. jansen2, and michael heuken1,2 — 1AIXTRON AG, Kaiserstr. 98, 52134 Herzogenrath, Germany — 2Chair of Electromagnetic Theory, RWTH Aachen University, Kackertstr. 15-17, 52072 Aachen, Germany — 3Institut für Micro- und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany
In this study, several growth parameters have been varied to investigate MOCVD of high-quality InGaN bulk layers using AIXTRON reactors. TMIn, TMGa and NH3 have been used as precursors, N2 as carrier gas and GaN layers as templates. Structural and optical properties have been studied by X-ray diffraction, atomic force microscopy and spectroscopic ellipsometry, respectively. The growth temperature increment from 705 to 755oC results in higher crystal quality but reduced In incorporation due to the low InN dissociation temperature. Also the effect of TMIn and TMGa flows on InGaN growth was investigated. With increasing TMIn flow from 2.5 to 4.4 *mol/min, In incorporation increased from 11.5% to 16.3% without diminishing quality (clear layer fringes observed in ω-2θ X-ray scans). Increasing TMGa flow causes a growth rate enhancement from 22 nm/hr to 37 nm/hr and a simultaneous increment of In content from 16.8% to 17.4% which were calculated by fitting ω-2θ X-ray scans. Even at that high In content, we still have fully strained InGaN layers with observable layer fringes and low RMS roughness around 1.1 nm.