Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.27: Poster

Dienstag, 15. März 2011, 18:00–21:00, P3

Epitaxial growth and characterization of InN and GaN on C-face SiC(111)/Si(111) — •Anja Eisenhardt, Marcel Himmerlich, Pierre Lorenz, Katja Tonisch, Jörg Pezoldt, and Stefan Krischok — Institut für Mikro- und Nanotechnologien, TU Ilmenau, PF 100565, 98684 Ilmenau, Germany

We studied the epitaxial growth and characterized the surface properties of thin GaN and InN films grown by plasma-assisted molecular beam epitaxy on Si(111) substrates carbonized via rapid thermal processing (RTP). This RTP process results in a 2-3 nm thick 3C-SiC(111) film with C-polarity. As characterization methods for the InN and GaN layers in-situ reflection high energy electron diffraction (RHEED), photoelectron spectroscopy (UPS, XPS) and atomic force microscopy (AFM) were used. Furthermore structural properties were ex-situ determined using X-ray diffraction (XRD) measurements. The results are compared to InN(0001) and GaN(0001) grown on sapphire and SiC(0001) substrates, respectively, as well as InN(0001) and GaN(0001) grown on 6H-SiC(0001). The electronic properties of the GaN and InN films grown on carbonized C-face SiC(111)/Si(111) are comparable to metal-face GaN and InN and therefore indicate metal-polarity and not the expected N-polarity. InN on C-face SiC(111)/Si(111) exhibits occupation of the conduction band due to the detected electron emission up to the Fermi level. The InN work function of about 4.0 eV is significantly lower compared to InN(0001)/sapphire (∼ 4.6 eV) and InN(0001)/6H-SiC (∼ 4.8 eV) samples. All InN and GaN epitaxial films were tensily strained.