Dresden 2011 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.31: Poster

Dienstag, 15. März 2011, 18:00–21:00, P3

Effect of nitridation on the MOVPE growth of InN on c-, r- and a-plane sapphire — •Sergej Solopow, Duc Dinh, Markus Pristovsek, and Michael Kneissl — TU Berlin, Institute of Solid State Physics, Hardenbergstr. 36, 10623 Berlin, Germany.

Growth of high quality InN is still challenging because of a narrow growth window and lack of suitable substrates. We report on the growth of InN on different oriented sapphire substrates, i.e. a-plane (1120), c-plane (0001), m-plane (1010) and r-plane (1012) using metalorganic vapor phase epitaxy (MOVPE).

To grow InN directly on the sapphire substrate, a nitridation process is used to improve crystallinity and optical properties. We have grown InN layers after nitridation for 2min at different temperatures from 500 ^∘C to 1050 ^∘C. We found that the nitridation temperature strongly affects the morphology as well as the orientation of InN layers. Atomic force microscopic (AFM) measurements on the grown samples showed smoother surfaces at higher nitridation temperatures. c-oriented InN was grown on c-plane sapphire with in-plane relationship of [1010] || [1120]_Sapphire. On the a-plane sapphire we obtained c-oriented InN with in-plane relationship of [1100]_InN || [0001]_Sapphire and [1120]_InN || [1100]_Sapphire at nitridation temperature higher than 900 ^∘C and additional in-plane relationship by temperatures below 900 ^∘C. We have grown also a-oriended InN on r-plane sapphire at nitridation temperature higher than 800 ^∘C. At nitridation temperatures below 800 ^∘C this orientation disappears.