Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.48: Poster

Dienstag, 15. März 2011, 18:00–21:00, P3

Effects of N and N/Li doping on ZnS epilayers grown on GaP — •Gunther Haas, Udo Römer, Stefan Lautenschläger, Sebastian Eisermann, Melanie Pinnisch, Andreas Laufer, and Bruno K. Meyer — I. Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany

High quality ZnS epilayers have been grown on GaP(100) by chemical vapor deposition using metallic zinc and hydrogen sulfide as source materials. An additional ammonia flow was applied to the growth process, with the purpose of N-doping. The co-doping of N and Li was realized due to the evaporation of lithium amide. To clarify the presence of N and Li in the ZnS layers a secondary ion mass spectrometer was used. In addition to that, we analyzed the effects of the dopants on the properties of the ZnS films by investigating the films with X-ray diffraction (XRD), low temperature photoluminescence (PL) and Raman spectroscopy.