Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 44: Poster Session I
HL 44.56: Poster
Dienstag, 15. März 2011, 18:00–21:00, P3
vapor phase growth of ZnO single crystals — •xi zhang1, frank herklotz1, ellen hieckmann1, jörg weber1, and peer schmidt2 — 1Institute für Angewandte Physik, Technische Universität Dresden, 01062, Dresden, Germany — 2Institute für Anorganische Chemie, Technische Universität Dresden, 01062, Dresden, Germany
Zinc oxide is a promising wide band gap semiconductor for future optoelectronic devices. Today ZnO bulk single crystals are grown by three different techniques: hydrothermally, from the melt and by chemical vapor transport. For our studies we employed in addition a simple and low cost vapor phase method which gives us good quality crystals and flexibility in crystal doping. The as-grown single crystals were characterized by resistivity measurements, scanning electron microscopy, electron backscatter diffraction and low temperature photoluminescence spectroscopy. The biggest crystals so far are c-axis oriented needles with maximum length of 40 mm and maximum diameter of 1 mm. The needle-shaped crystals are n-type with main donors due to Al, Ga and In impurities. The growth conditions have a strong influence on the optical properties of as-grown crystals.
This work was supported by the European Regional Development Fund and the Free State of Saxony. SAB project 14253/2423.