Dresden 2011 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.67: Poster

Dienstag, 15. März 2011, 18:00–21:00, P3

Electric properties of ZnO thin films before and after ion irradiation — •Florian Kuhl, Markus Piechotka, Martin Fischer, Torsten Henning, and Peter J. Klar — 1. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Giessen

ZnO doped with Al (AZO) is a transparent conducting oxide (TCO) and arouses interest for spacecraft applications, for example as electrode or covering layer in solar cells. In space environment this material has to resist radiation. We exposed AZO thin films to beams of Ar⁺-ions to simulate the particle irradiaton in space environment.

Before and after irradiaton we characterized the surface morphology and the electrical properties of the thin films and compared them. The electrical properties, i.e. the carrier concentration and the mobility were measured in the van-der-Pauw geometry at temperatures from 1.5 K to 285 K. To investigate the surface morphology we used SEM and optical microscopy.

We found out that there are changes in electrical properties at an acceleration voltage of 500 V. With lower acceleration voltages we could not find significant changes of the electrical properties.