Dresden 2011 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 44: Poster Session I

HL 44.91: Poster

Dienstag, 15. März 2011, 18:00–21:00, P3

Electrical and structural properties of the ZnO/BaTiO₃ interface — •Peter Schwinkendorf, Kerstin Brachwitz, Tammo Böntgen, Jan Zippel, Holger Hochmuth, Michael Lorenz, and Marius Grundmann — Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Universität Leipzig

Semiconductor/ferroelectric heterostructures are important for the realisation of new microelectronic applications such as the ferroelectric field-effect transistor[1]. To develop corresponding technologies up to commercial relevance there are several problems left to be solved. In particular, the interface semiconductor/ferroelectric seems to be the major key to further progress.
ZnO/BaTiO₃(BTO) heterostructures were grown by pulsed laser deposition on SrRuO₃(SRO) covered SrTiO₃(100) substrates. X-Ray diffraction measurements revealed the orientation of the SRO layer to be (100) and that of BTO to be (001), respectively. The surface morphology of the particular layers was studied by atomic force microscopy. The interfaces are smooth exhibiting RMS values of about 1 nm. For electrical measurements ohmic top Au-contacts were fabricated by dc-sputtering. The conducting SRO layer (ϱ = 3.3× 10⁻⁶ Ω m) serves as ohmic back-contact. Due to this design the structures are considered to be of MIS type. Current-voltage measurements indicate charging effects at the ZnO/BTO interface. To further investigate these charging effects, capacitance-voltage- and admittance-spectroscopy were performed.

[1] M. Brandt et al., J. Vac. Sci. Technol. B, Vol. 27, 1789 (2009)