Dresden 2011 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 45: Joint Poster Session
HL 45.13: Poster
Tuesday, March 15, 2011, 18:00–21:00, P1
Influence of silanization process on stability of solution processed bottom contact transistors — •Teodor Toader, Claudia Bock, and Ulrich Kunze — Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, Germany
In this work the influence of the silanization on the stability of solution-processed bottom-contact pentacene transistors using 13,6-N-Sulfinylacetamidopentacene (NSFAAP) [1] as precursor was investigated. The oxide of the devices is modified by trimethylchlorsilane (TMCS). Samples with an untreated oxide act as reference. The devices are stored under dark ambient conditions and nitrogen atmosphere, respectively. A clearly improved transistor performance of the TMCS-treated devices is found. A thirty times smaller sheet resistance of the treated transistors indicates an improved homogeneity of the film and is responsible for the superior device parameters. For transistors stored under dark ambient atmosphere the field-effect mobility decreased within 552 hours by 80% and 70% for untreated and treated transistors, respectively. The degradation of transistors stored under dark nitrogen atmosphere is considerable reduced (25% within 552 hours). The shift of the threshold voltage vs. time demonstrates that the absorption of H2O on the pentacene layer is the main reason for the reduced stability of devices stored under ambient conditions.
[1] Ali Afzali, et al., J. Am. Chem. Soc. 124 (30), 8812 -8813, (2002).