Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 48: ZnO: Devices
HL 48.9: Vortrag
Mittwoch, 16. März 2011, 12:30–12:45, POT 151
Piezoelectric properties of ZnO and (Zn,Mg)O- microstructures — •Christina A. Fobbe1, Irina Laubenstein1, Marcel Ruth1, Manuel H. W. Bader1, Alexander M. Bernhart2, Mark R. Kaspers2, Christian A. Bobisch2, Rolf Moeller2, and Cedrik Meier1 — 1University of Paderborn, Experimental Physics & CeOPP, Warburger Str. 100, 33098 Paderborn — 2University of Duisburg-Essen, Faculty of Physics, Lotharstr. 1, 47057 Duisburg
Zinc oxide (ZnO) is a highly attractive material for piezoelectric applications. The usage of ZnO crystals in applications such as sensors and actuators has already been demonstrated. Ab-initio calculations have shown that the piezoelectric constant for magnesium oxide (MgO) exceeds the value for bulk ZnO [1].
We present investigations of the piezoelectric properties of Zn1−xMgxO-microstructures with different Mg concentrations in comparison to binary ZnO-microstructures. For these experiments ZnO based microstructure devices have been fabricated on hydrothermally grown ZnO samples as well as on (Zn,Mg)O-epilayers grown by plasma-assisted molecular beam epitaxy (MBE).
The piezoelectric properties of the devices were investigated by applying an external electric field using a UHV-four-probe scanning tunneling microscope (STM). This way, we were able to reproduce the literature value of bulk ZnO and report on the results obtained for (Zn,Mg)O samples.
[1] G. Chambaud et al., Chem. Phys. 352, 147 (2008)