HL 5: Innovative Systems and Devices
Montag, 14. März 2011, 10:15–12:30, POT 06
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10:15 |
HL 5.1 |
Memristive switching in vanadium dioxide thin films — Danilo Bürger, Varun John, György Kovács, Ilona Skorupa, Manfred Helm, and •Heidemarie Schmidt
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10:30 |
HL 5.2 |
Disorder induced localization in crystalline phase-change materials — •Peter Jost, Theo Siegrist, Hanno Volker, Michael Woda, Philipp Merkelbach, Carl Schlockermann, and Matthias Wuttig
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10:45 |
HL 5.3 |
Electronic Transport Properties of Nb/InAs-Nanowire/Nb Josephson Junctions — •h. yusuf günel, igor e. batov, hilde hardtdegen, kamil sladek, andreas penz, gregor panaitov, detlev grützmacher, and thomas schäpers
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11:00 |
HL 5.4 |
low-k dielectric and amorphous SiO2 - a comparative TEM/EELS analysis — •Pradeep Singh, Sven Zimmerman, Steffen Schulz, Stefan Schulze, and Michael Hietschold
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11:30 |
HL 5.5 |
Quantitative Characterization of Dielectric and Electronic Properties on the Nanometer Scale — •Matthias Fenner, Ferry Kienberger, Hassan Tanbakuchi, Hans-Peter Huber, and Markus Hochleitner
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11:45 |
HL 5.6 |
Si-InAs heterojunction Esaki tunnel diodes with high current densities — •Cedric Bessire, Mikael Björk, Heinz Schmid, Kirsten Moselund, Hesham Ghoneim, Siegfried Karg, and Heike Riel
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12:00 |
HL 5.7 |
Evaluation of measurement techniques for characterization of charge trapping materials for memory applications — •Ekaterina Yurchuk, Thomas Melde, and Thomas Mikolajick
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12:15 |
HL 5.8 |
Silicon to nickel-silicide axial nanowire heterostructures as Bio-FETs — •Sebastian Pregl, Walter Weber, and Gianaurelio Cuniberti
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