Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 52: Nonpolar and Semipolar Nitrides
HL 52.4: Vortrag
Mittwoch, 16. März 2011, 12:30–12:45, POT 51
Spatially and spectrally resolved photoluminescence of InGaN MQWs grown on highly Si doped a-plane GaN buffer — •Martin Thunert, Matthias Wieneke, Anja Dempewolf, Frank Bertram, Armin Dadgar, Alois Krost, and Jürgen Christen — Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germany
A set of InGaN multi quantum well (MQW) samples grown by MOVPE on highly Si doped a-plane GaN on r-plane sapphire templates has been investigated using spatially resolved photoluminescence spectroscopy (µ-PL). The Si doping level of nominal about 1020 cm−3 leads to three dimensionally grown crystallites mostly terminated by m-facets. The MQW thickness has been systematically varied from nominally 2.1 to 4.2 nm, as well as the InGaN growth temperature, which was varied from 760 ∘C to 700 ∘C. The growth of a-plane GaN based devices leads to a non-polar growth direction avoiding the polarization field affected Quantum-Confined-Stark-Effect. Spatially resolved PL studies show for all samples low near band edge (NBE) GaN emission intensity over the whole area under investigation accompanied by highly intense InGaN MQW emission for single crystallites. The MQW luminescence shows a systematic blueshift with increasing InGaN growth temperature due to lower In incorporation as well as a systematic redshift with increasing MQW thickness. Excitation power dependent spectra at 4 K as well as temperature dependent PL spectra will be presented.