Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 52: Nonpolar and Semipolar Nitrides
HL 52.6: Vortrag
Mittwoch, 16. März 2011, 13:00–13:15, POT 51
Indium incorporation in GaInN quantum wells on various surface orientations — •Holger Jönen1, Uwe Rossow1, Heiko Bremers1, Stephan Schwaiger2, Ferdinand Scholz2, Sebastian Metzner3, Frank Bertram3, Jürgen Christen3, and Andreas Hangleiter1 — 1Institut für Angewandte Physik, TU Braunschweig — 2Institut für Optoelektronik, Universität Ulm — 3Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg
While GaN based blue-violet lasers are commercially available, several problems occur on the way towards the green spectral region. Among others the high indium contents needed for green emission result in high piezoelectric fields which dramatically reduce the oscillator strength. One promising approach to reduce the influence of polarization fields is to grow on non- or semipolar surfaces of the wurtzite structure. In this contribution we compare the In incorporation in GaInN multiple quantum wells on various surface orientations. Our samples were grown by MOVPE on bulk GaN substrates, (HVPE) GaN templates or foreign substrates. The In content in the QWs was determined by high resolution X-ray diffraction and photoluminescence. Applying the same growth conditions we find similar growth rates and In contents for the nonpolar layers compared to conventional c-plane structures. Preliminary experiments indicate that the In incorporation on the semipolar (1122)-plane is significantly larger which is assigned to a reduction of the strain-induced repulsive interaction between incorporated In atoms on the surface[1].
[1] J. Northrup, Appl. Phys. Letters 95, 133107 (2009).