Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 53: Optical Properties I

HL 53.1: Vortrag

Mittwoch, 16. März 2011, 12:30–12:45, POT 251

Microscopic theory of phonons in the semiconductor microcavity luminescence — •Christoph N. Böttge, Thomas Feldtmann, Mackillo Kira, and Stephan W. Koch — Department of Physics and Material Sciences Center, Philipps-University, Renthof 5, D-35032 Marburg, Germany

The strong interaction between electrons and longitudinal optical (LO) phonons in ZnO gives rise to pronounced phonon sidebands in the photoluminescence (PL) spectrum as strikingly shown in recent experiments and theoretical investigations. To develop a consistent microscopic theory of the sideband emission, we have generalized the semiconductor luminescence equations (SLE) by including phonon-assisted processes. This approach allows us to compute both spontaneous and stimulated emission at the excitonic resonance and its first phonon sideband. In addition, we have developed an analytic model to describe phonon-assisted luminescence in a cavity.

Because phonon-assisted emission and absorption take place on different sides of the excitonic resonance, we found that no normal-mode splitting occurs for the phonon sideband. This is in pronounced contrast to the usual case where the cavity mode coincides with the zero phonon line leading to strong qualitative changes in the spectra due to the normal-mode coupling. Our numerical and analytical results confirm that the sideband intensity is strongly enhanced when the reflectivity of the mirrors reaches a critical value. We show that also ZnO-based systems can reach normal-mode coupling for the zero-phonon line and strongly enhanced emission for the first phonon sideband.