Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 62: Nitrides: Advanced Characterization Techniques
HL 62.2: Vortrag
Mittwoch, 16. März 2011, 15:30–15:45, POT 51
Lateral transport in InGaN/GaN quantum wells: time-of-flight experiments — •Julia Danhof1,2, Ulrich T. Schwarz1,2, Yoichi Kawakami3, and Akio Kaneta3 — 1Fraunhofer IAF, Tullastr. 72, 79108 Freiburg, Germany — 2Institut für Mikrosystemtechnik, Georges-Köhler-Allee 106, 79110 Freiburg, Germany — 3Kyoto University, Katsura Campus, Nishikyo-ku, Kyoto, 615-2312, Japan
The Indium Gallium Nitride material system is known to have very small lateral charge carrier diffusion constant. In case of quantum well structures this is most likely due to Indium fluctuations and defects. We present a method to directly observe travelling charge carriers in quantum wells by solely optical means. By combining a confocal setup with a pulsed laser, a streak camera and the possibility to perform so called pinhole scans we were able perform time-of flight experiments and observe lateral diffusion in a green emitting InGaN/GaN multiple quantum well. Our measurement results can be described quantitatively by continuity and rate equation. This quantitative description also provides us with a local charge carrier diffusion constant for this sample.