Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 62: Nitrides: Advanced Characterization Techniques
HL 62.6: Vortrag
Mittwoch, 16. März 2011, 16:30–16:45, POT 51
Highly resolved optical spectroscopy on homoepitaxial AlN layers in magnetic fields — •Benjamin Neuschl1, Martin Feneberg1, Klaus Thonke1, Ramon Collazo2, and Zlatko Sitar2 — 1Institut für Quantenmaterie / Gruppe Halbleiterphysik, Universität Ulm, 89069 Ulm — 2Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, USA
We present optical emission spectroscopy studies on high quality c- plane AlN layers homoepitaxially grown by MOCVD on bulk AlN. The best full width at half maximum of an excitonic transition found by macroscopic photoluminescence is below 500 µeV exhibiting the unique sample quality. A detailed analysis of the excitonic bandgap region has been carried out by means of photoluminescence and cathodolumines- cence. Temperature and polarization dependent measurements allowed an identification of the observed transitions and the according valence bands.We accomplished magneto photoluminescence measurements on our best sample and found multiple splittings allowing further insight into the nature of the observed transitions.