Dresden 2011 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 65: Nitrides: AlGaN

HL 65.4: Vortrag

Mittwoch, 16. März 2011, 17:45–18:00, POT 51

Factors affecting the excitation process of Europium(Eu⁺³) ion in Europium-implanted AlGaN — •Jayanta Kumar Mishra¹, Torsten Langer¹, Uwe Rossow¹, Kirill Trunov², Andreas Wieck², and Andreas Hangleiter¹ — ¹Institut für Angewandte Physik, TU Braunschweig — ²Angewandte Festkörperphysik,Ruhr-Universität Bochum, Germany

Rare earth ions implanted into GaN are promising for optoelectronic applications. They show luminescence in the visible range while the luminescence from this material system is sharper as well as independent of temperature due to intra 4f transition of rare earth ions. To improve the emission efficiency we implanted Europium in GaN codoped with Mg at dose range from 10⁹cm⁻² to 10¹⁴cm⁻² with an energy of 100keV. The red emission from ⁵D₀→⁷F₂ of europium was remarkably enhanced by Mg codoping. When we tried Eu implanted AlGaN, Eu³⁺ shows more promising luminescence. The transition probability or the energy transfer efficiency enhances the Eu³⁺ luminescence in AlGaN. We show that Eu occupies a C_3v symmetry site in AlGaN but in case of Mg doped GaN, Eu occupies a different site. The energy transfer from the host to Eu ions depends on the position of Eu ions in the host lattice. We also investigated the role of carriers (electrons/holes) in the excitation process of Eu ion by doping AlGaN with different kind of carriers (p-type and n-type).