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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.125: Poster

Thursday, March 17, 2011, 18:00–21:00, P4

Characterization and simulation of coupled GaInN quantum wells — •Christopher Hein, Holger Jönen, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter — Institute of Applied Physics, TU Braunschweig, Germany

Despite the tremendous progress in the field of Group-III-nitrides, new applications and research topics are still emerging. One point of interest is the tunneling transport in nitride heterostructures, which can be realized by coupled quantum wells. In this contribution we present photoluminescence studies of coupled GaInN/GaN multiple quantum wells and the simulation of such structures using Nextnano++. The samples were grown by metal organic vapor phase epitaxy on c-plane sapphire. The In content and the thickness of the GaInN quantum wells determined by X-ray diffraction measurements was 38% and 0.26nm, respectively. The barrier width was varied for each sample between 4.15nm, 3.04nm, 1.3nm and 1.0nm. With decreasing barrier thickness the peak energies observed in photoluminescence decreased from 3.28eV to 3.12eV. In addition the sample structure was simulated by a self-consistent solution of Schrödinger's equation using Nextnano++. The measured PL emission energy was then used to check the results of the simulation and adjust simulation parameters. The decrease of photon energies related to reduced barrier widths can be described by an exponential function in good agreement with theoretical considerations.