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HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.15: Poster

Donnerstag, 17. März 2011, 18:00–21:00, P4

Optical properties of as-grown and ion implanted Cu2O thin films — •Christian Müller¹, Sebastian Geburt¹, Andreas Laufer², Bruno K. Meyer², and Carsten Ronning¹ — ¹Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany — ²I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

Copper(I) oxide is a promising material for future photovoltaic applications, especially due to its environmental friendly and cheap preparation process. The properties of copper(I) oxide are still a hot topic of research and especially n-doping is difficult. But similar problems could be solved in the past at materials like CIS, CGS and CIGS [1].

Copper(I) oxide thin filmes on glas substrates were prepared by reactive oxygen sputtering. The crystal quality and band edge properties were examined using UV-VIS transmission and reflectivity measurements combined with XRD. The layers were annealed in different atmospheres to investigate the effects on the quality of the films in term of phase transformation and the influence on the energy gap. Temperature and power dependent cathodo- and photoluminescence measurements on intrinsic samples were performed to investigate the emission properties with regard to excitonic effects and donator/acceptor behavior. Ion implanted samples were examined to discover extrinsic donor- and acceptor species and optical active impurities.

[1] Biccari F.: Defects and Doping in Cu2O. University of Rome, Diss., 2009