Dresden 2011 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.17: Poster
Thursday, March 17, 2011, 18:00–21:00, P4
Disorder Effects in Ga(AsBi) — •Christian Wagner1, Sebastian Imhof1, Alexej Chernikov2, Martin Koch2, Nico S. Köster2, Kolja Kolata2, Sangam Chatterjee2, Stefan W. Koch2, Xianfeng Lu3, Shane R. Johnson3, Daniel A. Beaton4, Thomas Tiedje5, Oleg Rubel6,7, and Angela Thränhardt1 — 1Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz, Germany — 2Fachbereich Physik, Philipps-Universität Marburg, 35032 Marburg, Germany — 3Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206, USA — 4Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada — 5Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia V8W 3P6, Canada — 6Thunder Bay Regional Research Institute, Thunder Bay, Ontario P7A 7T1, Canada — 7Department of Physics, Lakehead University, Thunder Bay, Ontario P7B 5E1, Canada
In recent years, Ga(AsBi) has been shown to be an interesting material for laser applications since its band gap can be varied over wide frequency range. The growth process, however, is still challenging and carrier dynamics remains governed by hopping processes. We show that emission spectra are well described by a two-scale disorder model (S.Imhof et al., Appl.Phys.Lett. 96, 131115 (2010)) and discuss time-dependent simulations and measurements. Theory and experiment show a good agreement in all cases.