Dresden 2011 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 85: Poster Session II

HL 85.21: Poster

Donnerstag, 17. März 2011, 18:00–21:00, P4

Polariton lasing from a GaAs microcavity: a temperature dependent analysis in the spectral and temporal domain — •Jean-Sebastian Tempel¹, Franziska Veit¹, Marc Aßmann¹, Lars Erik Kreilkamp¹, Manfred Bayer¹, Arash Rahimi-Iman², Andreas Löffler², Sven Höfling², Stephan Reitzenstein², Lukas Worschech², and Alfred Forchel² — ¹Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany — ²Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, D-97074 Würzburg, Germany

We present a spectral and temporal analysis of the emission from a strongly coupled GaAs/GaAlAs microcavity in the temperature range 10-110K. Two distinct transitions in the ground state emission from the lower polariton branch are observed up to 70K; thereby, we evidence polariton lasing in the pump power regime between the thresholds. In particular, we show that the two transitions are clearly evidenced in the emission pulse duration and in the photon statistics based on the second-order correlation function. With further increasing temperature up to 110K changes in the spectral as well as in the temporal domain are observed.