Dresden 2011 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.36: Poster
Donnerstag, 17. März 2011, 18:00–21:00, P4
Boltzmann equation approach to rectification at a potential step — •Stephan Rojek, Daniel Urban, Fred Hucht, and Jürgen König — Theoretische Physik, Universität Duisburg-Essen and CeNIDE, 47048 Duisburg, Germany
Ref. [1, 2] shows an experimental analysis of a two-dimensional electron gas with two regions separated by a potential step. The difference in the potential originates from two parallel gates on top of the two-dimensional electron gas.
A bias voltage parallel to the potential step leads to a transverse voltage proportional to the square of the applied bias voltage. This effect can be exploited for rectification, since the transverse voltage does not depend on the bias polarity.
We model the system by means of the Boltzmann equation in the relaxation time approximation. We allow the scattering times to be energy dependent and consider different relaxation times for scattering processes with energy transfer larger and lower than kBT. In order to study the rectification effects, the distribution function has to be calculated to second order in the applied electric field. We discuss the relevance of the determined transverse voltage for the measurements in Ref. [1, 2].
[1] A. Ganczarczyk et al., arXiv:0804.0689v3 (2009).
[2] A. Ganczarczyk et al., AIP Conf. Proc. 1199, 143 (2009).