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HL: Fachverband Halbleiterphysik
HL 85: Poster Session II
HL 85.92: Poster
Donnerstag, 17. März 2011, 18:00–21:00, P4
Mobility and carrier density in nanoporous indium tin oxide films — •Jaqueline Weissbon1, Andreas Gondorf1, Martin Geller1, Axel Lorke1, Martina Inhester2, Anna Prodi-Schwab2, and Dieter Adam2 — 1Fakultät für Physik and CeNIDE, Universität Duisburg-Essen, D-47048 Duisburg — 2Evonik Degussa GmbH, D-45772 Marl, Germany
Indium tin oxide (ITO) has become an indispensable material for a
range of electronic devices. It is transparent in the entire visible range
and electrically conducting, hence, a well suited material for transpar-
ent electrodes. An interesting possibility to realize transparent, con-
ducting films without the use of vacuum techniques is the printing
of dispersions containing ITO nanoparticles[1]. We study here the
charge carrier concentration and mobility of various nanoporous in-
dium tin oxide (ITO) films, using Hall measurements and optical spectroscopy[2]. For the carrier density inside the particles ( 2 − 4 · 1020 cm−3), the results of these complementary measurement techniques are in good agreement with each other and suggest that even in highly porous materials the common equations for the Hall resistance can be applied. However, for the mobilities in these layers the results differ very strongly: from 50 cm2/Vs in optical spectroscopy (which is comparable to bulk ITO) to 0.4 cm2/Vs in Hall measurements.This suggests that the mobility for electrical transport in nanoporous ITO films is strongly suppressed by scattering at interparticle boundaries.
Ederth et al. Phys. Rev. B 68, 155410 (2003).
Gondorf et al. Phys. Rev. B., submitted (2010).