Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 86: Quantum Dots: Growth and Characterization
HL 86.7: Vortrag
Freitag, 18. März 2011, 12:00–12:15, FOE Anorg
Ultraviolet photoluminescence of zinc oxide quantum dots sputtered at room-temperature — Gillian Kiliani1, Reinhard Schneider2, Dimitri Litvinov2, Dagmar Gerthsen2, •Mikhail Fonin1, Ulrich Rüdiger1, Alfred Leitenstorfer1, and Rudolf Bratschitsch1 — 1Center for Applied Photonics, Fachbereich Physik, Universität Konstanz, 78457 Konstanz, Germany — 2Laboratorium für Elektronenmikroskopie, Karlsruher Institut für Technologie, 76128 Karlsruhe, Germany
Zinc oxide (ZnO) quantum dots showing room-temperature ultraviolet photoluminescence are prepared for the first time by radio-frequency magnetron sputtering without any annealing steps. The quantum dots are embedded in amorphous silicon dioxide and have a narrow size distribution of 3.5 ± 0.6 nm. Room-temperature photoluminescence shows emission in the ultraviolet. Optical transmittance and photoluminescence spectra both exhibit a blueshift of the quantum dot absorption and emission compared to bulk ZnO material which is attributed to quantum confinement. Carrying out the fabrication entirely at room-temperature prevents the degradation of nanooptical devices containing quantum dots which might occur during annealing steps.