Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 88: Lasers
HL 88.9: Vortrag
Freitag, 18. März 2011, 12:30–12:45, POT 151
2.3 µm GaSb-based semiconductor disk laser with sub-MHz linewidth — •Sebastian Kaspar, Benno Rösener, Marcel Rattunde, Tino Töpper, Christian Manz, Klaus Köhler, and Joachim Wagner — Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
Semiconductor disk lasers, also known as vertical-external-cavity surface-emitting lasers (VECSELs) can be regarded as a hybrid of classical semiconductor lasers and solid state lasers, offering an almost free choice of wavelength, high output power and diffraction-limited circular beam. VECSELs emitting in the 2−3 µm wavelength range are of special interest for a variety of applications such as materials processing and laser surgery. Other applications like spectroscopy and optical data transmission require narrow linewidth laser sources.
We report on the realization of narrow-linewidth GaSb-based VECSELs emitting in the 2.0−2.3 µm range. Single frequency emission is realized by inserting a quartz plate as birefringent filter into the external resonator for wavelength control and by optimizing the cavity for TEM00 mode operation. By using a high-finesse Fabry-Pérot interferometer (FPI), stable single frequency operation was verified with an output power above 200 mW. Coarse wavelength tuning of up to 118 nm is achieved by rotating the quartz plate. Modehop-free fine-tuning of the laser wavelength of over 5 GHz was possible by mounting the output coupling mirror to a piezoelectric transducer. By stabilizing the emission wavelength to the edge of a FPI transmission maximum, a linewidth of less than 400 kHz was achieved.