Dresden 2011 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 51: Magnetic Half-metals and Oxides II
MA 51.7: Vortrag
Donnerstag, 17. März 2011, 12:30–12:45, HSZ 401
Half-metallic antiferromagnets and their possible device applications — •Nguyen Hoang Long1,2, Masako Ogura2, and Hisazumi Akai2 — 1Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany — 2Department of Physics, Graduate School of Science, Osaka University, Osaka 560-0043, Japan
Half-metallic antiferromagnetism is a special case of half-metallic ferrimagnetism where the total magnetization is completely canceled out (fully spin-compensated). Such materials exhibit half-metallicity with 100% spin-polarized Fermi surface and vanishing magnetization simultaneously. They are especially useful for spintronics devices since they are insensitive to external field and in many cases have a high magnetic transition temperature.
In this work, a new type of half-metallic antiferromagnets are designed by use of the first-principles KKR Green’s functions method. The materials consist of transition metals A and B, with the total d-valence electron number of 10, and chalcogens/pnictogens X (with chemical formula ABX2) or halogens Y (with chemical formula ABY4). We have found that they are chemically stable and the calculated magnetic transition temperatures are relatively high. The transport properties of the systems are also calculated by the KKR-CPA method combined with the Kubo-Greenwood formula. The results show that those systems can function as spintronics materials if used as components of GMR/TMR and magnetic random access memory cells.
We acknowledge funding from DFG project MO 1731/3-1.